摘要
准确评价晶体管三种组态的噪声性能是低噪声放大器电路组态优化设计的关键．本文在晶体管三种组态Ｅｎ—Ｉｎ人噪声分析等方面给出了若干新结果．
Evaluating the noise performances of three configurations of transistor amplifier accurately is the crux of optimization design of circuit configurations for low--noise amplifier. New results about En-In noise analysis of three configurations of transistor are presented in this paper.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1997年第2期93-95,99,共4页
Acta Electronica Sinica
