摘要
介绍了线宽小于10nm 的多晶硅缝隙纳米线的制作技术。缝纳线技术适用于制作量子器件、光电器件和集成电路。
The fabrication techniques of polysilicon slit nano wire with less than 10nm wide is introduced.It is indicated that the slit nano wire structure is applied to fabricate the quantum devices,optoelectronic device and integrated circuts.
出处
《半导体情报》
1997年第1期48-51,共4页
Semiconductor Information
关键词
缝隙纳米线
制作
集成电路
Slit nano wire
Fabrication technique
Application
