摘要
介绍真空蒸馏法取代传统试剂法从铟中脱除镉和铊。通过实验研究了采用真空蒸馏的方法从铟中脱除铊的最佳工艺条件。实验表明,控制蒸馏温度950℃,恒温时间40m in,即可使残余物中铊的含量为0.0006%,铟的挥发率2.14%。
Removal of Cd and TI from indium by vacuum distillation was introduced, and the optimal condition was chosen. Content of thallium in the residue could be lowered to 0. 0006%, whereas the evaporation rate of indium was 2. 14% when distillated at 950℃ for 40 min.
出处
《云南化工》
CAS
2007年第1期37-39,43,共4页
Yunnan Chemical Technology
关键词
铟
真空蒸馏
提纯
indium
vacuum instillation
purification
