摘要
分析了高能Pb27+辐照预注入12C+的和未预注入12C+ 4H-SiC样品在,退火前后傅立叶变换红外光谱和拉曼散射光谱的变化。从傅立叶变换红外光谱可以知道,900℃以上的退火使损伤层发生显著恢复;在拉曼散射光谱中可以看到1200℃退火后有石墨相的存在。实验结果说明,高温退火有利于损伤的恢复,使注入到碳化硅中的碳原子发生聚集并引起相变。
The 4H-SiC specimens were implanted with 110keV C-ions and then irradiated with 230MeV Pb-ions and subsequently annealed at different temperatures in vacuum. The samples were investigated after each annealing stage by using FrIR and Raman spectroscopy. The obtained FrIR spectra showed several interference fringes in the range from 960 cm^-1 to 1450 cm^-1. The intensity of fringes decreases with the increase of annealing temperature, and an abrupt decrease of the fringe intensity was found for annealing above 900℃, indicating that there was a significant recovery of the irradiation-induced damage in the crystal for annealing at high temperatures. The Raman spectroscopy showed that after annealing at 1200℃ for 30 rain the amorphous layer was recovered and the precipitation of carbon atoms in graphite occurred.
出处
《核技术》
EI
CAS
CSCD
北大核心
2007年第4期314-317,共4页
Nuclear Techniques
基金
国家自然科学基金项目(批准号10575124)
中国科学院"西部之光"人才培养计划资助的项目
