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聚噻吩修饰纳米结构TiO_2膜电极光电性能研究 被引量:2

Study on photo voltaic conversion properties of the PTh-modified nanostructured TiO_2 film electrode
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摘要 用光电流作用谱、光电流-电势图等光电化学方法研究了聚噻吩(PTh)膜和纳米结构TiO2/聚噻吩(ITO/TiO2/PTh)复合膜的光电转换性质。结果表明,PTh膜的禁带宽度为2.02eV,价带位置为-5.86 eV,导带位置为-3.84 eV。在ITO/TiO2/PTh复合膜电极中存在p-n异质结,在一定条件下异质结的存在有利于光生电子-空穴对的分离,PTh修饰ITO/TiO2电极可使光电流产生波长发生明显红移,从而提高了宽禁带半导体的光电转换效率。在实验条件下,单色光的光电转换效率最高可达到13%。 The photo voltaic conversion properties of polythiophene film and nanostructured TiO2/PTh film electrode were studied by using the photocurrent action spectra, the photocurrent dependence of potential and UV-vis absorption spectra. The bandgap of PTh film is 2. 02 eV,the conduction band of PTh film is -3.84 eV,and the valve band is-5.86 eV. The nanostructured TiO2/PTh electrode could enlarge the visible optical absorption region and obviously increase the photocurrent in visible region, the p-n heterojunction existed in TiO2/PTh nanostructured electrode which favored the separation of electron/hole pairs, and thus the photovoltaic conversion efficiency could be improved. The conversion efficiency of homogeneous light can reach 13% in experimental conditions.
出处 《河北科技大学学报》 CAS 2007年第1期14-18,共5页 Journal of Hebei University of Science and Technology
基金 国家自然科学基金资助项目(20573031 20203008) 河北省自然科学基金资助项目(202351) 河北省教育厅指导性项目(Z2005203)
关键词 纳米结构TiO2/PTh电极 光电化学 聚噻吩 nanostructured TiO2/ PTh electrode photoelectrochemistry polythiophene
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