摘要
本文给出了可同时测量GaAs FET噪声系数和资用功率增益的改进方法,以及对有耗匹配网络设计和损耗的定量分析方法。文中介绍了用多种源阻抗确定最佳噪声参量的方法,实践证明上述技术具有重要的参考意义。
In the paper, an improved method for the simultaneous determination of GaAs FET noise figure and available power gain is given a method for the design of loss matching network and quantitative analysis of its loss is also presented. The determination of GaAs FET optimum noise parameters with different source impedances and by means of a computer-aided data processing is introduced. The practice shows that this technique is very useful in the development of low noise GaAs FET.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1989年第1期73-78,共6页
Acta Electronica Sinica
