摘要
本文报导了1.55μm InGaAsP/InP LED的制造工艺和性能测量。在100mA正向电流下,LED与多模光纤和单模光纤耦合后的出纤功率分别为20～30μW和2—4μW。讨论了获得准确p-n结位置的方法。
Fabrication technology and performances of 1.55um InGaAsP-InP LED's are reported in this paper. The coupled power of LED into a multimode fiber and a single mode fiber is 20-30μW and 2-4μW, respectively. The way to obtain the accurate p-n junction position is discussed.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1990年第2期132-136,共5页
Chinese Journal of Luminescence
