摘要
本文详细地介绍了真空微电子栅极工艺制造的自剥离与无版光刻技术，并用这两种方法分别制造出了符合要求的栅极结构．在现有的条件下进行了栅控场致发射特性的测试，并通过实验曲线计算出了栅控场致发射的三个参数．
Abstract In this paper, two kinds of techniques fabricating the gate of the vacuum microelectronics (VME) device, the self-align lift-off and mask-free photolithography, are introduced in detail. The gate-control field emission characteristics are tested. Three main parameters are calculated.
基金
国家自然科学基金
国家教委资助
