摘要
采用反应磁控溅射法在玻璃基片上制备N掺杂TiO2-xNx薄膜和纯TiO2薄膜,并且对两种薄膜样品分别进行了300、400和500℃的退火处理.采用X射线光电子能谱仪(XPS)、X射线衍射仪(XRD)、扫描电子显微镜(SEM)和紫外-可见光光度计(UV-V is)对经过退火处理的样品进行了表征.结果表明:成功制备了N掺杂TiO2-xNx薄膜,部分N进入了TiO2薄膜晶格,并且以N-O键形式存在;N掺杂TiO2-xNx薄膜和纯TiO2薄膜相对比,晶型和表面形貌没有什么太大的区别,但通过紫外-可见光吸收谱图可以发现经过400℃退火处理的N掺杂TiO2-xNx薄膜吸收带边从纯TiO2薄膜的400 nm红移到455 nm.
N-doped titanium dioxide thin films and pure titanium dioxide thin films were grown on glass substrates by reactive magnetron sputtering . And the two kinds of thin films were annealed at 300 ℃ ,400 ℃ and 500 ℃ respectively. The annealed films were characterized with X-ray photoelectron spectroscopy （ XPS）, X-ray diffraction （ XRD）, scanning electron microscope （SEM） and ultraviolet visible light spectroscopy （UV-Vis）. The results show that the N-doped titanium dioxide thin films were successfully prepared and although there are almost no differences between N-doped titanium dioxide thin films and pure titanium dioxide thin films in crystal structure and surface appearance, a red dr/ft of the absorption edge from 400 nm to 455 nm is observed in N-doped titanium dioxide thin films.
出处
《暨南大学学报（自然科学与医学版）》
CAS
CSCD
北大核心
2007年第1期88-91,共4页
Journal of Jinan University(Natural Science & Medicine Edition)
基金
广东省自然科学基金项目(04010480)
广东科技攻关项目(2003Z3-D2011)
