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一种4ppm/℃曲率补偿CMOS带隙基准源 被引量:8

A Curvature Compensated CMOS Bandgap Reference with 4 ppm/℃
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摘要 提出了一种采用新型曲率补偿技术的CMOS带隙基准源。该电路利用BJT电流和电压的指数关系,得到了高阶曲率补偿的基准电压。在-55^+125℃温度范围内,通过HSPICE仿真验证,基准电压的温度系数不到4ppm/℃。在此基础上,实现了可调节的基准电压输出。 A novel curvature compensated CMOS bandgap reference is proposed, which could generate a higherorder curvature compensated reference voltage with the exponential feature of BJT. Simulated in HSPICE, the bandgap reference source exhibits a temperature coefficient lower than 4-ppm/℃ in the temperature range from -55 ℃ to 125 ℃, and two adjustable reference voltages are also obtained.
出处 《微电子学》 CAS CSCD 北大核心 2007年第1期101-104,共4页 Microelectronics
关键词 CMOS 温度补偿 带隙基准源 温度系数 CMOS Temperature compensation Bandgap reference source Temperature coefficient
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参考文献9

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