摘要
随着功率双极集成电路在军民两用的各种电源管理、功率驱动等领域的广泛应用,以及集成电路生产规模的进一步扩大,对参数一致性、重复性、均匀性的要求越来越高;文章重点介绍功率器件硼基区注入工艺,对工艺原理和工艺方案进行了详细阐述;并给出了工艺结果以及在产品中的应用情况。
The application of power bipolar IC＇s in power management and power drive and the increasing scale of IC production are imposing strict requirements on device parameters for consistency, repeatability and uniformity. In this paper, boron ion implantation into base region of power devices is described. The principle of the process and specific process scheme are elaborated. Results of the process and its applications in production are also presented.
出处
《微电子学》
CAS
CSCD
北大核心
2007年第1期24-27,共4页
Microelectronics
