摘要
用分子束外延设备(MBE)在GaAs(100)衬底上生长了InSb型界面的AlSb/InAs超晶格,界面生长过程中采用了As保护下不同的中断时间.运用掠入射X射线反射技术(GIXRR)对样品进行了测量,并对测量结果进行了模拟和分析,发现As保护下生长中断20s能获得最平整的AlSb/InAs界面.结合分析显微镜下观察到的样品形貌,过短的界面中断时间会导致界面富In并形成In点,而过长的中断时间会导致AlAs型界面的形成,两者都使界面变得粗糙.另外,还讨论了生长中断在分子束外延生长中的应用.
Different As-soak time is applied during InSb-like interfaces growth of InAs/AlSb superlattices on GaAs（100） substrates. The interface roughness is studied by grazing incidence X-ray reflectivity. The reflectivity curves are simulated by standard software and the rms roughness of the interfaces is obtained. It was shown that the sample with As-soak time of 20 seconds has the most smooth interfaces. By analyzing the microscope images of the samples, we suggest that In-rich interfaces will be formed with too short As-soak time and AlAs-like interfaces are obtained with too long As-soak time, and in hoth cases the interface will be cearsened. Grazing incidence X-ray rellectivity is also recommended as a powerful tool for assessing the structure of superlattices.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第3期1785-1789,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:50572120)资助的课题.
关键词
分子束外延
生长中断
超晶格
掠入射X射线反射
MBE, growth termination, superlattice, grazing incidence X-ray reflectivity
