摘要
通过sol-gel法在Si(111)基片上分别制备了LaNiO3(LNO)底电极和LaNiO3/La0.3Sr0.7TiO3(LNO/LSTO)底电极.然后采用sol-gel方法,在两种衬底上分别制备了Pb(Zr0.5Ti0.5)O3(PZT)铁电薄膜.XRD分析表明,两种PZT薄膜均具有钙钛矿结构,且在LNO底电极上的PZT薄膜呈(100)择优取向,而在LNO/LSTO底电极上的PZT薄膜呈随机取向.铁电性能测试表明,相对LNO衬底上制备的PZT薄膜,在LNO/LSTO底电极上制备的PZT薄膜的剩余极化强度得到了有效的增强,同时矫顽场也增大.介电常数和漏电流的测试表明,LNO/LSTO底电极上制备的PZT薄膜具有大的介电常数和漏电流.
LaNiO3 （LNO） and LaNiO3/La0.3 Sr0.7 TiO3 （LNO/LSTO） bottom electrodes were prepared on Si （ 111 ） substrates by sol-gel process. Then Pb （Zr0.5 Ti0.5 ）O3 （PZT） ferroeleetrie films were then deposited on the bottoms also by sol-gel process. XRD showed that both of the PZT films have perovskite structure. The one on LNO bottom adopts （100） preferred orientation and the one on LNO/LSTO bottom adopts random orientation. The results of ferroelectric measurement showed that the ferroelectricity of the PZT film on LNO/LSTO bottom electrode was substantially enhanced compare with the one on LNO bottom electrode. The coercive field was also enhanced. The film on LNO/LSTO bottom electrode has larger dielectric constant and leakage current.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第3期1735-1740,共6页
Acta Physica Sinica
基金
湖北省教育厅重大科技项目基金(批准号:Z20052001)
黄石市科技攻关计划项目基金(批准号:黄科技发成[2006]18号)
湖北师范学院研究生启动基金(批准号:2004J04)等资助的课题.~~
