摘要
利用直流对靶磁控溅射技术在单晶Si衬底上制备了C/CoCrTa/X(X=Cr,Ti)介质材料.分别采用振动样品磁强计、X射线衍射仪、扫描探针显微镜对样品的磁性、微结构等进行了测试分析.研究发现,Ti缓冲层有利于样品中Co晶粒的易轴垂直于膜面生长.以Ti为缓冲层的样品,颗粒尺寸和表面粗糙度较小,而且磁畴明显,说明以Ti为缓冲层的薄膜样品更适宜做垂直磁记录.
C/CoCrTa/X （X = Cr, Ti） films were fabricated with DC facing target magnetron sputtering apparatus. Their magnetic properties and microstructure were characterized by vibrating sample magnetometer （VSM）, X-ray diffraction （XRD）, and scan probe microscope （SPM）, respectively. The experimental results indicate that the Ti underlayer can induce the c-axis orientation of Co grain in the direction perpendicular to the film surface. For samples with Ti underlayer, the grain size and the surface roughness are relatively finer, and magnetic domains can be observed obviously. These results show that the sample with Ti underlayer is more suitable for the perpendicular magnetic recording media.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第3期1730-1734,共5页
Acta Physica Sinica
基金
国家自然科学基金(批准号:10274018)
河北师范大学博士基金(批准号:L2003B08)
河北省自然科学基金(批准号:A2005000143)资助的课题.~~
关键词
COCRTA
垂直磁记录
缓冲层
微结构
CoCrTa, perpendicular magnetic recording, underlayer, microstructure
