摘要
报导了在Ｐ／Ｉ界面引入ＣＧＬ：Ｂ：Ｃ＊缓冲层对大面积（２７９０ｃｍ２）单结集成Ｐ－Ｉ－Ｎ型。ａ－ＳＩ：Ｈ太阳电池性能影响的研究结果．实验发现：带有ＣＧＬ：Ｂ：Ｃ层的ａ－ＳＩ：Ｈ太阳电池性能的提高主要是填充因子ＦＦ的增加所导致，实验所得电池的ＦＦ平均达６０．３３％，平均有效面积转换效率ＦＦ达６．０％，分别比目前的生产水平（ＦＦ＝５３．９％，ＥＦ＝５３％）提高了１１．９９％和１３．２％．最后，依据建立的电池能带模型，从理论上解释了引入ＣＧＬ：Ｂ：Ｃ后电池性能得以提高的原因．
This paper reports some investigation results of large area (2 790 cm2)single junction integrated a-Si:H solar cell with boron and carbon composition graded layer (CGL:B:C) at P/I heterointerface.It is found that the performance of a-Si:H solar cell with CGL:B:C is improved, which is mainly caused by the increase of fill factor.The mean fill factor and effective photoelectric conversion effeciency of experimental solar cell are 60.33% and 6. 0%respectively,increasing by 11.9% and 13.2% relative to the present production efficiencies (FF=53.9%, EF=5.3% ).Finally, energy band model of a-Si:H solar cells with buffer layer is established to explain theoretically the cause of enhanced performance.
出处
《西安交通大学学报》
EI
CAS
CSCD
北大核心
1996年第6期115-122,共8页
Journal of Xi'an Jiaotong University
