摘要
对ＬＬ－ＰＣＶＤ（真空负载保护等离子体化学气相沉积系统）进行了计算机控制的改进，改进后的设备在沉积过程中各路源气体可进行自动控制。在改进后的设备上采用逐层生长法制备了ｎｃ－Ｓｉ∶Ｈ薄膜。
The improvement of computer controlling of load lock plasma chemical vapor deposition system has been analysed.The source gases can be controlled automatically after the improvement of the deposition system.The nanocrystalline silicon films have been prepared using layer by layer deposition method.Some key technics have been discussed.
出处
《山东建材学院学报》
1996年第3期53-56,共4页
Journal of Shandong Institute of Building Materials
关键词
计算机控制
半导体
沉积设备
纳米硅薄膜
PCVD
computer controlling
plasma chemical vapor deposition system
nanocrystalline silicon films
