摘要
本文研究了Ａｌ金属化系统中的回流效应，提出了一种全新三层金属化系统抗电迁徙结构，同时对新旧两种结构的金属化系统进行了各种动态应力的电迁徙实验对比，结果显示出新结构在抗电迁徙性能上的明显优越性，ＳＥＭ分析对此也提供了有力的证据．
Abstract A novel multi-layered metallization structure using backflow is proposed, It can intentionally restrain the electromigration failure in contact region. Under kinds of dynamic stress including current, frequency and temperature ramp, the experimental data show an evident improvement for the novel structure over the common one. SEM micrographs provide powerful proof too.
基金
国家自然科学基金
