期刊文献+

H_2S Sensing Characteristics of Thin Film SnO_2 Sensor with N_2 Treatment 被引量:2

H_2S Sensing Characteristics of Thin Film SnO_2 Sensor with N_2 Treatment
在线阅读 下载PDF
导出
摘要 <正>SnO_2 thin film sensors were fabricated by a thermal evaporation method.The sensors were heated for thermal oxidation.For high porosity,SnO_2 thin film sensors were treated in a N_2 atmosphere.The sensors that were treated with O_2 after being treated with N_2 showed 70 % sensitivity for 1×10~ -6) of H_2S,which is higher than the sensors that were only treated with O_2.The Ni metal,as a catalyst,was evaporated on the thin film Sn on the Al_2O_3 substrate.The sensor was heated to grow the Sn nanowire in a tube furnace with N_2 flow.Sn nanowire was heated for oxidation.The sensitivity of SnO_2 nanowire sensor was measured for 500×10~ -9) of H_2S.The selectivity of the SnO_2 nanowire sensor was compared with the thin film and the thick film SnO_2.Each sensor was measured for H_2S,CO,and NH_3 in this study. SnO2 thin film sensors were fabricated by a thermal evaporation method. The sensors were heated for thermal oxidation. For high porosity, SnO2 thin film sensors were treated in a N2 atmosphere. The sensors that were treated with O2 after being treated with N2 showed 70 % sensitivity for 1 × 10^-6 of HES, which is higher than the sensors that were only treated with O02. The Ni metal, as a catalyst, was evaporated on the thin film Sn on the Al2O3 substrate. The sensor was heated to grow the Sn nanowire in a tube furnace with N2 flow. Sn nanowire was heated for oxidation. The sensitivity of SnO2 nanowire sensor was measured for 500 × 10^-9 of HES. The selectivity of the SnO2 nanowire sensor was compared with the thin film and the thick film SnO2. Each sensor was measured for H2S, CO, and NH3 in this study.
出处 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期385-388,共4页 Rare Metal Materials and Engineering
关键词 SNO2 gas sensor N2 NANOWIRE H2S SnO2 gas sensor N2 nanowire H2S
  • 相关文献

参考文献8

  • 1Arijit Chowdhuri, vinay Gupta, K Sreenivas. Applied Physics Letters[J], 2004, 84(7): 1180.
  • 2Niranjan R S, Patil K R, Sainkar S R et al. Materials Chemistry and Physics[J], 2003, 80:250.
  • 3Yanagimoto K, Sunada S et al, Journal of Alloys and Compounds[J], 2004, 372:208.
  • 4Atanassova E, Tyuliev G et al. Applied Surface Science[J], 2004, 225:86.
  • 5Dailey J W, Taraci J et al. Journal of Applied Physics[J], 2004, 96(12): 7556.
  • 6Jun Wang, Jian Sha et al. Materials Letters[J], 2005, 59:2710.
  • 7Calestani D, Zha M et al. Journal of Crystal Growth[J], 2005, 275:e2083.
  • 8Sergei V Kalinin, Shin J et al. Journal of Applied Physics[J], 2005, 98:044503-1.

同被引文献11

引证文献2

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部