摘要
The structure characteristic and electric performance of ZnO film deposited on nucleation side of free-standing diamond substrates under different heating temperatures (Th) of substrate and working pressures (p) were studied. The structure of the ZnO films tested by X-ray diffraction shows that ZnO film of high c-axis orientation is deposited on the nucleation side of free-standing diamond substrate which is extremely smooth when Th=250 ℃ and p=0.4 Pa. After annealing at 480 ℃ in N2 atmosphere, the SEM and the AFM analyses demonstrate that the c-axis orientation of ZnO film is obviously enhanced. The resistivity of ZnO films also increases up to 8×105 ■·cm which is observed by I?V test.
The structure characteristic and electric performance of ZnO film deposited on nucleation side of free-standing diamond substrates under different heating temperatures （Tb） of substrate and working pressures （p） were studied. The structure of the ZnO films tested by X-ray diffraction shows that ZnO film of high c-axis orientation is deposited on the nucleation side of free-standing diamond substrate which is extremely smooth when Th=250 ℃ and p=0.4 Pa. After annealing at 480 ℃in N2 atmosphere, the SEM and the AFM analyses demonstrate that the c-axis orientation of ZnO film is obviously enhanced. The resistivity of ZnO films also increases up to 8×10^5Ωcm which is observed by I- V test.
出处
《中国有色金属学会会刊：英文版》
CSCD
2006年第B01期302-305,共4页
Transactions of Nonferrous Metals Society of China
基金
Project (60577040) supported by the National Natural Science Foundation of China
Project (0404) supported by the Shanghai Foundation of Applied Materials Research and Development
Projects(0452nm051, 05nm05046) supported by the Nano-technology Project of Shanghai
Project (T0101) supported by the Shanghai Leading Academic Disciplines
关键词
氧化锌薄膜
沉积
加工压力
加工温度
自立金刚石衬底
声表面波器件
ZnO film
c-axis orientation
free-standing diamond film
surface acoustic wave device
radio-frequency magnetron sputtering
