摘要
实验研究了非晶态As2S8半导体薄膜在紫外汞灯和He_Cd激光照射下的光诱导现象,证实了光照射后的As2S8薄膜的折射率增大,体积缩小,可见光吸收谱的吸收带蓝移。在此基础上,应用光折变效应试制了As2S8条波导,观测到As2S8条波导的光阻断效应,实现了光_光效应的开关功能。
The photoinduced phenomena of As2S8 film under an ultraviolet and He-Cd laser irradiation are reported. It is confirmed that the refractive index of As2S8 film increases, the volume of As2S8 film decreases, and the visible optical absorption spectra edge of .A2sS8 film is shifted to the short wavdength after light irradiation. Based on study of these phenomena, an As2S8 channel waveguide was fabricated successfully by applying the photorefractive effect. On study of the optical stopping effect of As2S8 channel waveguide, it was found that the application of this effect possesses a useful switching function with the photo-optical effect.
出处
《光学技术》
EI
CAS
CSCD
北大核心
2007年第1期44-47,共4页
Optical Technique
基金
国家自然科学基金(60177017)
上海市重点学科建设基金(T0501)
上海市教育委员会重点学科建设计划资助课题
关键词
导波光学
非晶态As2S8半导体薄膜
光诱导现象
光阻断效应
guided wave optics
amorphous As2S8 semiconductor films
photoindueed phenomena
optical stopping effect
