摘要
报道了一种无耗ＧａＡｓＭＥＳＦＥＴ单片混频器的优化设计过程，实验与计算结果吻合较好。射频频率为１１～１１．５ＧＨＺ时，变频损耗小于２．５ｄＢ。
The procedure of designing a lossless GaAs MESFET monolithic mixer is described. The experimental results agree well with the simulation results. Inthe 11￣11. 5 GHz RF band,the conversion loss is less than 2. 5 dB.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1996年第4期385-387,共3页
Research & Progress of SSE
