摘要
以单晶硅片为靶材,高纯Ar和O2分别为溅射气体和反应气体,采用反应磁控溅射法在铝基体上制备了硅氧化物薄膜。由扫描电镜(SEM)、投射电镜(TEM)、电子衍射(ED)、X射线能量散射仪(EDX)等表征了薄膜的形貌、结构和组成,通过划痕试验、弯曲试验以及热冲击试验考察了薄膜与基体结合性能。研究结果表明,在Al基体表面制备了表面粗糙度均匀、无裂缝的富硅非晶态硅氧化物薄膜,其中Si和O的原子比为1∶1.57。在经NaOH溶液腐蚀的Al基体上SiOx薄膜具有很强的结合能力,可作为蛋白质芯片的固相载体。
Single crystal silicon slice as target,Ar and 02 respectively as sputtering and reacting gas,a silicon oxides （SiO.） film was deposited on Al substrate by reactive magnetron sputtering. It＇s morphology,structure and composition were characterized by scanning electron microscope （SEM）, transmission electronic microscope （TEM）,electron diffraction （ED） and energy dispersive X-ray （EDX）,and the adhesion property between thin film and substrate was examined by scratching, bending and thermal shock tests. The results show that the SiO, film with uniform roughness, free of cracks presents a non-crystalline Si-rich oxide,and the atomic ratio of the Si to O is 1： 1.57. The SiOx film and the Al substrate etched in NaOH solution are well-bonded and can be used for protein chip carrier.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2006年第12期1926-1928,共3页
Journal of Functional Materials
基金
国家重点基础研究发展计划(973计划)资助项目(ZM200103B01)
国家自然科学基金资助项目(20083001)
河南省教育厅自然科学基金资助项目(2006430005)
关键词
硅氧化物薄膜
铝基体
磁控溅射
结合性能
silicon oxides film
Al substrate
magnetron sputtering
adhesion
