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不同掺杂位置对双层异质结OLEDs性能的影响

Influence of Different Doping-Sites on the Performance of Double-Layer Heterojuction OLEDs
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摘要 通过在双层异质结有机电致发光器件(OLEDs)ITO/N,N′-Diphenyl-N,N′-bis(1-naphthyl)(1,1′-biphenyl)-4,4′-diamine(NPB)/tri-(8-hydroxyquinoline)-aluminum(Alq3)/Mg:Ag发光层Alq3中的不同位置掺杂红色荧光材料4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-py-ran(DCJTB),研究了该类器件中载流子的输运过程、复合位置及能量传递机理。实验结果表明,掺杂剂对于载流子有较强的俘获能力,并影响器件的载流子输运过程以及电流机制;掺杂位置的不同导致器件发光性能发生很大变化,而当掺杂层位于有机/阴极金属界面时还起到阴极电子注入缓冲层的作用。 The carriers transport, recombination and energy transferring in double layer heterojunction organic light emitting devices(OLEDs) ITO/N, N'-Diphenyl-N, N'-bis(1-naphthyl) ( 1,1 '-biphenyl )-4,4'-diamine (NPB)/tri-( 8-hydroxyquinoline)-aluminum ( Alq3 )/Mg: Ag were studied by doping 4-(dicyanomethylene)-2-t-butyl-6-(1, 1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran(DCJTB) in different sites of Alq3 emitting layer. Experimental results indicate that dopant has strong ability to capture carriers and influences carriers transport and current mechanism. Different doping sites result in great change of device performance. Furthermore, the doped layer is able to act as buffer layer for electrons injection when it locates at organic/cathode interface.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2006年第12期1432-1435,共4页 Journal of Optoelectronics·Laser
基金 国家自然科学基金资助项目(60372002 60425101)
关键词 有机电致发光器件(OLEDs) 双层异质结 掺杂 载流子输运 organic light emitting devices(OLEDs) double layer heterojunction doping carriers transport
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参考文献8

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