摘要
文章研究了p-GaN／i—GaN／n-Al0.3Ga0.7N异质结背照式p-i—n可见盲紫外探测器的制备与性能。器件的响应区域为310～365nm，最大响应率为0．046A/W，对应的内量子效率为19％，优值因子R0A达到1．77×10^8Ω·cm^2，相应的在363nm处的探测率D^＊=2．6×10^12cmHz^1/2W^-1。
A backside-illuminated visible-blind ultraviolet detector based on an AlGaN p-i-n heterostructure has been successfully fabricated and tested, The p-i-n photodiode structure consists of 1.0μm n-type Al0.3 Ga0.7 N： Si layer grown by MOCVD onto a low temperature AlN buffer layer on a polished sapphire substrate, On top of the layer is a 0.25 μm undoped GaN active layer and a 0.25 μm p-type GaN ： Mg top layer. Round mesas of mesas of area A = 1.96 × 10^ -3cm^2 are obtained by ICP （Inductively Coupled Plasma etching） etching using 02, BCl3 and Ar. The photodiode exhibits a spectral responsivity band from 310nm to 365nm. Maximum responsivity R=0.046A/W, corresponding to an internal quantum efficiency of 19% and Ro values up to 1.77 × 10^8Ω . cm^2 are obtained, correspending to D^＊ =2.6 × 10^12cmHz^1/2W^-1.
出处
《激光与红外》
CAS
CSCD
北大核心
2006年第11期1036-1039,共4页
Laser & Infrared
