摘要
利用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP/InGaAs/InP双异质结外延材料,通过台面制作、硫化后覆盖聚酰亚胺钝化、电极生长等工艺,制作了台面构造的256×1正照射InGaAs探测器阵列。测试了器件的I-V特性与响应光谱,得出器件的暗电流Id、零偏压电阻R0、G因子;通过信号和噪声的测试,计算出了在278K时的平均峰值探测率为1.33×1012cmHz1/2W-1。256元InGaAs探测器阵列与CTIA结构L128读出电路相互连,经封装后成功制备256×1线列InGaAs短波红外焦平面,在室温(300K)时测得256元响应信号,其响应不均匀性为19.3%。
Based on doped-InGaAs absorbing layer in MBE-grown p-InP/n-InGaAs/n-InP double-heterostructure epitaxial materials,256 × 1 front-illuminated mesa InGaAs detector arrays have been made after the technics of mesamaking by dry and wet etching, passavition by sulfidation and polyimide, growth of electrode and so on. Ⅰ-Ⅴ curves, response spectra and detectivity of the devices are measured. The mean peak detectivity of the detectors is 1.33 - 10^12 cmHz^1/2W^-1. 256 element InGaAs detector arrays are connected with CTIA-structure L128 read out integrate circuit. The response signals of the 256 elements are successfully measured at room temperature （300K） after packaged. The ununiformity of response is 19.3%, and the reasons of the ununinformity are discussed.
出处
《激光与红外》
CAS
CSCD
北大核心
2006年第11期1032-1035,共4页
Laser & Infrared
