摘要
研究了抛物型半导体量子点中强耦合激子的性质.在有效质量近似下,采用线性组合算符和幺正变换的方法,导出了半导体量子点中重空穴激子的基态能量.在强耦合情况下讨论了量子点半径和受限强度对半导体量子点中激子基态能量的影响.以氯化铊(TlCl)半导体为例进行了数值计算.结果表明:在强耦合情况下,重空穴激子的基态能量随量子点半径的增大而减小,随量子点受限强度的增大而增大.
The properties of strong-coupling excitons in semiconductor quantum dots are investigated using the linear combination operator and unitary transformation methods. The ground state energy of the heavy-hole exciton is obtained under the effective-mass approximation. The influences of the radius of the quantum dots and the confinement strength on the ground state energy of the strong-coupling exciton in the semiconductor quantum dots are discussed in the case of strong-coupling. Numerical calculations are performed for a TlCl semiconductor. Our results illustrate that the energy of the ground state heavy-hole exciton decreases with the increase of the radius of the quantum dots and increases with the increase of the confinement strength ω0 of quantum dots.
基金
国家自然科学基金资助项目(批准号:10347004)~~
关键词
半导体量子点
激子
线性组合算符
强耦合
semiconductor quantum dot
exciton
linear combination
strong-coupling
