摘要
采用高真空直流磁控溅射的方法,在玻璃衬底上制备了结构为Ta/freelayer/Cu/CoFe/IrMn/Ta的IrMn顶钉扎自旋阀.研究了NiFe/CoFe和NiFeCr/CoFe分别作为复合自由层时,自旋阀的矫顽力特性.为了降低自旋阀的矫顽力,并保持高的磁电阻率(MR),采用NiFeCr/NiFe/CoFe作为自旋阀的复合自由层,得到的自旋阀的MR为10.08%,矫顽力为4.87×(103/4π)A/m.利用弱磁场下的横向退火工艺,此结构自旋阀的矫顽力可降至0.01×(103/4π)A/m以下.通过实施以上的优化方案,可以研制出高磁电阻率和低矫顽力的GMR传感器.
IrMn top spin valves, with the structure of Ta/free layer/Cu/CoFe/IrMn/Ta were deposited on glass substrate by high vacuum DC magnetron sputtering. The coercivity of the spin valves was investigated when NiFe/CoFe and NiFeCr/CoFe were selected as synthetic free layers, respectively. In order to obtain spin valves with low coercivity and high magnetoresistance ratio （MR）, NiFeCr/NiFe/CoFe was used as synthetic free layer. The spin valve with NiFeCr/NiFe/CoFe structure had a MR of 10.08% and the coercivity was 4.87×（10^3/4π） A/m. By a transverse annealing procedure with a weak applied external magnetic field, the coercivity could be reduced to less than 0.01×（10^3/4π）A/m. With these improvements, GMR sensors with high MR and low coercivity could be achieved.
出处
《传感技术学报》
CAS
CSCD
北大核心
2006年第05B期2061-2064,共4页
Chinese Journal of Sensors and Actuators
关键词
自旋阀
复合自由层
横向退火工艺
spin valve
synthetic free layer
transverse annealing procedure
