摘要
探讨了提高Si量子点发光强度的可能途径。这些方法主要包括:采用高密度和小尺寸的有序Si量子点、光学微腔结构、表面钝化处理技术和稀土发光中心掺杂。
The routes for enhancing luminescent intensity of Si quantum dots was discussed. These methods including the ordered Si quantum dots with high density and small size, the use of optical microcavity structure, surface passivation technologies, and doping of rare earth luminescent centers, which are very important for the fabrication of high luminescent intensity Si quantum dots.
出处
《微纳电子技术》
CAS
2006年第10期476-480,491,共6页
Micronanoelectronic Technology
关键词
Si量子点
发光强度
光致发光
电致发光
Si quantum dots
luminescent intensity
photoluminescence
electroluminescence
