摘要
对于双极性晶体管,由于自身存在的自加热现象,严重地影响着器件的特性。基于热电流方程、泊松方程及电流密度方程,在二维器件仿真环境下,进行了微纳级小尺寸npn双极性晶体管热现象的器件物理特性分析。重点研究了器件的集电极电流IC与晶格温度T的因变关系。研究结果显示,随着IC的增加,器件的晶格温度逐渐升高,VCE保持在3.0V、VBE达到最大值0.735V时,随器件晶格温度的升高VBE将减小。最后,笔者给出了描述晶体管温变关系的三维曲线。
Bipolar junction transistor （BJT） has the self-heating phenomena, which seriously af- fects the properties of transistor. Based on the thermal flow equation, Poisson＇s equation and current density equation, the thermal phenomena of Micronano level small-dimension BJTs was analyzed using the 2-D simulated software. A plot of Ic vs. T is given. The simulation results show that the temperature will increase as the collector current increases. While holding the collector- emitter voltage constant at 3.0 V, the base-emitter voltage reaches maximum value about 0.735 V and then starts to decrease. Finally, the 3-D temperature distribution of BJT was plotted.
出处
《微纳电子技术》
CAS
2006年第10期461-463,475,共4页
Micronanoelectronic Technology
关键词
超深亚微米
微纳级
双极性器件
热现象
集成电路
VDSM （very deep submicrometer）
micronano level
bipolar transistor
hot phenomena
IC
