摘要
为给金属氧化物半导体场效应功率管(PowerMOSFET)在航天系统中的应用提供辐照数据基础和依据。用60Co源对将应用于空间系统的两种PowerMOSFET进行了不同总剂量的辐照实验。从微观氧化物陷阱电荷和界面态的辐射感生角度,分析了PowerMOSFET器件在60Coγ射线辐射下的总剂量和剂量率效应以及辐照后70℃退火特性。试验表明与N沟道PowerMOSFET相比,P沟道PowerMOSFET可能更适合空间应用。
Two kinds of power MOSFET were irradiated by 60^Co γ-rays in order to investigate their resistance to cosmic rays. The total dose radiation responses and voltage-current characteristics after 70℃ annealing were studied based on the changes of oxide charges and interface states induced by the irradiation. The results show that the P channel devices are more radiation resistant than the N channel devices.
出处
《辐射研究与辐射工艺学报》
EI
CAS
CSCD
北大核心
2006年第4期201-204,共4页
Journal of Radiation Research and Radiation Processing
