摘要
从理论上分析了三种不同的LDO电压转换电路及各自的频率补偿方案,并基于SPECTRE对此三种LDO的各项性能进行了仿真,仿真采用0.6μm 5 V CMOS工艺。在此基础上,对这三种LDO电路各自的优缺点进行了比较以便于在不同应用场合下能够选择合适的LDO结构。
Three different types of Low Drop-out voltage regulators as well as their frequency compensation schemes are theoretically ＇analyzed and practically simulated. The simulation is based on 0. 6μm 5 V standard CMOS process using SPECTRE model. Drawing on the simulation results, advantages and disadvantages of each type of LDO are carefully weighed so that the most appropriate type can be chosen to fit in a specific application.
出处
《电子器件》
EI
CAS
2006年第3期706-709,共4页
Chinese Journal of Electron Devices
