摘要
对铜在含硅气氛中低温沉积、随后进行扩散处理的表面化学热处理进行了研究。使用光学显微镜、Ｘ射线衍射（ＸＲＤ）仪、电子探针（ＥＰＭＡ）等对渗层进行了显微硬度、成分和结构分析，探讨了工艺参数对渗层的影响。研究结果表明，通过这种表面化学热处理可以在铜表面形成Ｃｕ５Ｓｉ和Ｃｕ１５Ｓｉ４，其硬度较基体有很大提高。
The reaction of SiH4/H2 mixture with copper has been studied. It is found that a copper-silicide intermetallic compound layer forms when selecting appropriate siliconizing process. The microhardness, components and structure of the layer are studied by means of microscope, XRD and EPMA. The effects of silicating parameters on the layer are demonstrated in this paper. It is also found that the Si diffusion layer which are harder than copper is composed of Cu5Si and Cu15Si4.
基金
国家自然科学基金
关键词
表面改性
化学热处理
铜
含硅气氛
surface modification
low-temperature deposition
thermochemical treatment
copper-silicide intermetallic compound
