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GaAs微结构中共振隧穿薄膜介观压阻效应研究 被引量：3

Study on the Meso-Piezoresistive Effect of Resonant Tunneling Film in GaAs Micro-Structure
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摘要 设计并利用控制孔技术加工了GaAs基微结构和基于该微结构的共振隧穿薄膜,并通过实验研究了微结构中共振隧穿薄膜的介观压阻效应,试验结果表明其介观压阻灵敏度比硅的最大压阻灵敏度高一个数量级。 The GaAs micro-structure and the resonant tunneling film based on the micro-structure were designed and processed by control hole technology. And the meso-piezoresistive effects of the film were studied through experiments, more than one order higher piezoresistive sensitivity than that of silicon is demonstrated.
作者 王建 张文栋 薛晨阳 熊继军 张斌珍
机构地区 中北大学仪器科学与动态测试教育部重点实验室
出处 《半导体技术》 CAS CSCD 北大核心 2006年第9期702-705,共4页 Semiconductor Technology
基金 国家自然科学基金资助(50405025 50375050)
关键词 共振隧穿薄膜 介观压阻效应 砷化镓基微结构 resonant tunneling film meso-piezoresistive effect GaAs micro-structure
分类号 TN305.7 [电子电信—物理电子学]
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参考文献8

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共引文献40

同被引文献13

  • 1毛海央,张文栋,熊继军,薛晨阳.共振隧穿二极管Ⅰ-Ⅴ特性的一致性测试与研究[J].仪器仪表学报,2006,27(z2):1189-1191. 被引量：2
  • 2李文望,孙道恒.悬臂梁式微机械隧道陀螺的结构设计与性能分析[J].传感器技术,2005,24(2):48-50. 被引量：4
  • 3张斌珍,李科杰,张文栋,薛晨阳,陈建军.GaAs基微机械加工技术[J].半导体技术,2006,31(7):481-484. 被引量：6
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引证文献3

半导体技术
2006年 第9期

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