期刊文献+

纳米金属氧化物气敏薄膜的最佳晶粒尺寸和介观效应

The Optimun Grain Size of Nano Metal Oxide Gas Sensing Thin-Film and Mesoscopic Effect
在线阅读 下载PDF
导出
摘要 纳米金属氧化物气敏薄膜存在灵敏度的最佳膜厚l*和最佳晶粒尺寸r0*,其值与材料和工艺有关。最佳晶粒尺寸的存在是一种新的介观效应,它来自晶粒尺寸缩小到一定程度时反映吸附氧负离子的Fermi统计失效;根据当晶粒尺寸缩小到特征长度rm时晶粒将保持电中性的Kubo理论对Fermi统计公式进行修正,从而给出了最佳晶粒尺寸r0*=2rm的结果,并用Kubo理论电子逸出功公式估算了rm与r0*的数值。 The optimum film thickness l° and optimum grain size ro° for sensitivity in nano metal oxide gas sensing thin film are existent, and the value is dependent on the material and technics. The existenceof optimum grain size is a new kind of mesoscopic effect, which is from the disability of Fermi statistics for negative oxide ions when the grain size reduced to a certain extent, according to the modification of Kubo theory for the grains keeping neuter to fermi statistics when the grain size reduced tocharacter length rm, we get that ro° =2rm, and the values of ro° and optimum grain size ro° are estimated with the word function in Kubo theory.
出处 《计测技术》 2006年第B09期12-15,共4页 Metrology & Measurement Technology
关键词 晶粒尺寸 介观效应 Fermi统计 grain size mesoscopic effect Fermi statistics
  • 相关文献

参考文献6

  • 1Ogawa H,et al.Hall measurement studies and an electrical conduction model of tin oxide ultrafine partriclc films[J].Appl.Physics,1982(53):4448-4455.
  • 2Xu Chaonan,Yamazoe N.Grain size effects on gas sensitivity of porous SnO2 based elements[J].Sensors and Actuators,1991,B (3):147-153.
  • 3Dieghez A,Romano A Gopel W.Morphological analysis of nanocrystalline SnO2 for gas sensor applications[J].Sensors and Actuators 1996,B3(1):1-8.
  • 4Halperin W P.Quantum size effects in metal particle[J].Revs.Mod.Phys,1988,58(3):532-606.
  • 5Belanger D,Dodelet J P,Lambos B A,Pickson J J.Thickness dependence of transport properties of doped plycrystalline tin oxide films[J].Electrochem Soc.,1985,132 (6):1398-1405.
  • 6袁庆华,刘文利,李蕾,李建明,裘南畹.N型金属氧化物泊松方程的解和费米能及E_f的变化范围 Ⅰ泊松方程解[J].山东大学学报(工学版),2005,35(5):111-113. 被引量:2

二级参考文献2

  • 1LEARY R. Calculation of cairier concentration in polycrystalline film as a function of surface aceptor state density application for ZnO gas sensors[J]. J Electrochem Soc, 1982, 129(6):1382.
  • 2李建明.气敏半导体薄膜的载流子浓度的研究[J].山东工业大学学报,1988,18(1):82-82.

共引文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部