摘要
利用液封直拉法(LEC)生长了直径50mm〈100〉和〈111〉晶向的InAs单晶.分析研究了n型杂质Sn,S和p型杂质Zn,Mn的分凝特性、晶格硬化作用、掺杂效率等.利用X射线双晶衍射分析了晶体的完整性.对InAs晶片的抛光、化学腐蚀和清洗进行了分析,在此基础上实现了抛光晶片的开盒即用(EPI-READY).
We grow 50mm-diameter InAs single crystals of （100） and （111） orientations with liquid encapsulated Czochralski （LEC） method. The segregation behavior,lattice hardening effect, and doping efficiency of n-type impurities S, Sn and ptype impurities Zn, Mn are studied. The lattice perfection of the InAs single crystal is studied with X-ray diffraction. The polishing,chemical etching and cleaning of an InAs wafer are analyzed. An epi-ready InAs polished single crystal wafer is realized.
关键词
砷化铟
掺杂
抛光
indium arsenide
doping
polishing
