期刊文献+

具有自动振幅控制的CMOS压控振荡器 被引量:3

CMOS voltage-controlled oscillator with automatic amplitude control
原文传递
导出
摘要 调频范围是压控振荡器的一个重要的性能指标,当调频范围增大时,振荡器的振幅会随着频率的不同而改变。为了保证压控振荡器在调频范围内振幅恒定,提出了一种新型的自动振幅控制的电路结构。自动振幅控制电路由峰值检测、比较器和低通滤波器几部分构成,自动振幅控制电路与压控振荡器组成的反馈环路控制压控振荡器的输出恒定。电路采用标准的0.35μm CM O S工艺流片并进行测试。测试结果表明:压控振荡器的调频范围为18.2MH z^24.3MH z,达到了28.7%,自动振幅控制电路保证压控振荡器的振幅变化仅为8.7%。 The tuning range is an important performance parameter of voltage-controlled oscillators (VCO), but as the tuning range increases, the oscillator amplitude will vary at different frequencies. This paper present a circuit for automatic amplitude control that ensures that the oscillators amplitude remains constant. The automatic amplitude control uses a peak detector, a comparator and a low pass filter. The automatic amplitude control is conrected to the VCO by a feedback loop to keep the VCO output constant. The circuits were fabricated using a standard 0.35 /~m complementary metal oxide semiconductor (CMOS) process. The measured VCO tuning range was from 18.2 MHz to 24.3 MHz, for a range of 28.7 % while the automatic amplitude control circuit ensures that the VCO amplitude only varies by 8.7 %.
出处 《清华大学学报(自然科学版)》 EI CAS CSCD 北大核心 2006年第7期1337-1340,共4页 Journal of Tsinghua University(Science and Technology)
基金 国家自然科学基金资助项目(60475018)
关键词 互补-MOS型集成电路 压控振荡器 自动振幅控制 峰值检测 调频范围 complementary metal oxide semiconductor voltage-controlled oscilla or, automatic amplitude control peak detector tuning range
  • 相关文献

参考文献1

二级参考文献10

  • 1[1]Rofougaran A, Rael J, Rofougaran M, et al. A 900 MHz CMOS LC-oscillator with quadrature outputs. In: ISSCC Digest of Technical Papers, 1996: 392-393.
  • 2[2]Wu Chung-yu, Kao Hong-sing. A 1.8 GHz CMOS quadrature voltage-controlled oscillator (VCO) using the constant-current LC ring oscillator structure. In: ISCAS'1998, 1998: 378-381.
  • 3[3]Fenk J, Birth W, Irvine R G, Sehrig P, et al. An RF front-end for digital mobile radio. In: Bipolar Circ. and Tech. Mtg., 1990: 244-247.
  • 4[4]Rategh H R, Lee T H. Superharmonic injection-locked frequency dividers. IEEE J. Solid-State Circuits, 1999, 34: 813-821.
  • 5[5]Niknejad A, Meyer R G. Analysis, design, and optimization of spiral inductors and transformers for Si RF IC's. IEEE J. Solid-State Circuits, 1998, 33: 1470-1481.
  • 6[6]Rategh H R, Samavati H, Lee T H. A CMOS frequency synthesizer with an injection-locked frequency divider for a 5-GHz wireless LAN receiver. IEEE J. Solid-State Circuits, 2000, 35: 780-787.
  • 7[8]Copeland M A, Voinigescu S P, Marchesan D, et al. 5-GHz SiGe HBT monolithic radio transceiver with tunable filtering. IEEE Trans. Microwave Theory and Techniques, 2000, 48(2): 170-181.
  • 8[9]Grau G, Langmann U, Winkler W, et al. A current-folded up-conversion mixer and VCO with center-tapped inductor in a SiGe-HBT technology for 5-GHz wireless LAN applications. IEEE J. Solid-State Circuits, 2000, 35(9): 1345-1352.
  • 9[10]Long J R, Copeland M A, Kovacic S J, et al. RF analog and digital circuits in SiGe technology. In: ISSCC Digest of Technical Papers, 1996: 82-83.
  • 10[7]Madihian M, Drenski T, Desclos L, et al. A 5-GHz-band multifunctional BiCMOS transceiver chip for GMSK modulation wireless systems. IEEE J. Solid-State Circuits, 1999, 34(1): 25-31.

共引文献2

同被引文献20

引证文献3

二级引证文献5

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部