摘要
在X、γ射线的剂量或剂量率测量场合,常用到PIN硅光电二极管。比起传统的电离室等,它有体积小、灵敏度高、成本低、不需要高压等优点;与计数管、闪烁探测器相比,其电流输出的特性可以避免脉冲场下的死时间问题。但大剂量照射造成的辐射损伤是影响其性能的最大因素。以XRB100s-CB380为例,通过试验研究了PIN硅光电二极管的特性,包括灵敏度、偏压影响、温度补偿、辐射损伤及退火等,并简单介绍了实际应用中对输出电流信号的处理方法。
The PIN photodiode is often used in dose or dose rate monitoring of X or γ rays. Comparing with ionization chamber, it has the advantages of small volume, high sensitivity, low cost and no need of high voltage. Unlike counter tubes and scintillation detectors, its current output mode makes it have no dead time in the pulse-mode radiation field. However, the radiation damage by high total dose of exposure affects its performance. The characteristics of PIN photodiode including sensitivity, bias voltage, temperature coefficient, radiation damage and annealing are studied by experiments. Also, a method to deal with the output current is introduced.
出处
《核技术》
EI
CAS
CSCD
北大核心
2006年第8期573-576,共4页
Nuclear Techniques
