摘要
本文对ＧａＡｓ光电阴极片ＵＨＶ系统中原子级表面清洁方法做了研究，它们是：光加热法、直接加热法、离子轰击加退火法、热子加热法，表面清洁效果用装于ＵＨＶ系统中间在线俄歇检测，表面质量用Ａａ／ＧａＡｕｇｅｒ峰高进行比较，指出两种用于第三代象增强器光电阴极的表面清洁方法：ＣＳ－离子轰击加退火法和热子背加热法。
We have studied four kinds of cleaning methods for obtaining atomically clean surfaces of CaAs cathde in UHV system.The methods includes:photo heating,GaAs resistance heating,ion bombarding and annealing,heater back heating. The cleaning effect is analyzed by surface Auger spectoscope in situ the UHV system surface quality is measured by As/ Ga Auger spectrum peak ratio. Experiment results show that Cs+ bombarding and annealing method and heater back heating aresuitable for the fabrication of the GaAs cathode in the third generation intensifier.
出处
《光子学报》
EI
CAS
CSCD
1996年第10期889-892,共4页
Acta Photonica Sinica
关键词
原子级清洁
光加热
砷化镓
光电阴极
Atomically clean
Photo heating
Resistance heating
Ion bombard
Heater
