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通讯设备用低阻高耐压过流保护器材料研究

Research on Materials of Low Resistivity, High Voltage Over-current Protector for Communication Apparatus
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摘要 过流保护器要求芯片尺寸为φ5mm×2.2mm,电阻值为15?,耐电压AC330V。采用液相施主掺杂和添加钙等方法优化配方制成PTCR材料。经复阻抗谱、SEM及XRD等测试分析表明,材料的微观结构得到了明显改善,PTC性能得以提高。当x(Mn(NO3)2)为0.47%时,材料的居里点为70℃、室温电阻率为14?·cm、温度系数为11.5%℃–1、耐压强度大于165V/mm。 The required over-current protection chip size of our task is φ5mm×2.2mm, and the corresponding resistance and voltage durability are 15 Ω and 330 V(AC). Using liquid-phase donor doping and calcium adding etc method to optimize the formulation, a PTCR material was acquired, Through complex impedance spectra, SEM, XRD etc. tests, it was proved that the microstructure and PTC properties of the material were improved. When x(Mn(NO3)2)=0.47%, The Curie point of the material is 70℃, room temperature resistivity is 14Ω· cm, temperature coefficient of resistance ( TCR ) is 11.5%℃^-1, voltage durance is over 165 V/mm.
出处 《电子元件与材料》 CAS CSCD 北大核心 2006年第8期61-63,69,共4页 Electronic Components And Materials
关键词 电子技术 通讯设备 过流保护器 液相施主掺杂 PTCR electronic technology communication apparatus over-current protection liquid-phase donor doping PTCR
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