摘要
常压ＭＯＣＶＤ制备ＺｎＳｅ基ｐｉｎ二极管的蓝绿色电致发光张吉英，杨宝均，范希武，吕有明，申德振（中国科学院长春物理研究所．长春１３００２１）（中国科学院激发态物理开放研究实验室，长春１３００２１）蓝色电致发光和激光器件的研究已有一段较长的历史．人们曾...
ZnSe pin structure has been grown on n+-GaAs substrate by AP-MOCVD. Bulegreen electroluminescence of ZnSe pin diodes was obtained at 77 K. The peak position located at 465 urn and had a big full width at half-maximum(FWHM). With increasing pulse current, its FWHM was compressed.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1996年第1期89-90,共2页
Chinese Journal of Luminescence
基金
国家863光电子主题资助
中国科学院长春物理所激发态物理开放研究实验室资助
