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H_2对N_2直流辉光放电电子行为的影响 被引量:3

Effect of adding hydrogen to a nitrogen glow discharge on electron behavior
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摘要 通过用MonteCarlo方法模拟N2-H2混合气体直流辉光放电等离子体快电子行为,从不同H2浓度的电子能量分布函数,电子密度以及ef-N2碰撞率等方面,研究了加H2对氮辉光放电等离子体过程的影响.研究结果表明随着H2浓度的升高,电子的平均能量增加,电子密度及ef-N2的各种非弹性碰撞率减小;但在一定的放电条件下,加入少量的H2,可以提高N2的离解和电子激发率,即选取合适的放电参数,加入少量的氢,不仅可以提高电子密度,而且有助于提高重要氮活性粒子(N2,N+,N)的浓度.并得到了有利于粒子(N2,N+,N)产生的H2的最佳浓度.研究结果为认识N2/H2混合气体辉光放电等离子体过程机理,探索提供“氮活化粒子富源”的实验研究提供参考依据.计算的激发态(C3пu)的分布与实验结果进行了比较. The effect of adding hydrogen to a nitrogen de glow discharge is investigated by using Monte Carlo code to simulate the electron behavior in the cathode dark space (CDS). It is shown that when increasing the percentage of H2, the electron mean energy is increased, the electron density and various e-N2 collision rates are decreased, and when adding small amounts of H2 into nitrogen gas, e-N2 dissociation and electron excitation rates can be enhanced under certain discharge conditions, which will contribute to increase the density of significant active nitrogen species (N2^* , N^+ , N) in discharge space. The hydrogen concentration is varied between 0 % and 30 %. These effects can be explained by the collisions taking place in the discharge. We have also compared our calculated results with experimental data.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2006年第7期3524-3530,共7页 Acta Physica Sinica
基金 河北省自然科学基金(批准号:A2006000123)资助的课题.~~
关键词 N2-H2辉光放电 MONTE CARLO模拟 e-N2碰撞率 N2-H2 dc glow discharge, Monte Carlo simulation, e-N2 collision rate
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  • 1Czerwiec T, Greer F, Graves D B. Nitrogen dissociationin a low pressure cylindrical ICP discharge studied byactinometry and mass spectrometry [J]. J. Phys. D, 2005,38: 4278.
  • 2Shoolib Shah M, Salem M, Ahmad R,et al. Langmuirprobe characterization of nitrogen plasma for surfacenitriding of AISI-4140 steel [J]. J. Mater. Process Techn.,2008,199: 363.
  • 3Cho J, Han S, Lee Y, et al. The measurement of nitrogenion species ratio in inductively coupled plasma source ionimplantation [J]. Surf. Coat. Techn., 2001, 136: 106.
  • 4Ishikawa K, Yamaoka Y, Nakamura M, et al. Surfacereactions during etching of organic low-/: films byplasmas of N2 and H2 [J]. J. Appl. Phys., 2006, 99:083305.
  • 5Thorsteinsson E G, Gudmundsson J T. A global (volumeaveraged) model of a nitrogen discharge: I. steady state[J]. Plasma Sources Sci. Techn., 2009, 18: 045001.
  • 6Thorsteinsson E G, Gudmundsson J T. A global (volumeaveraged) model of a nitrogen discharge: II. Pulsedpower modttiatiofl [J]. Plasma Sources Sci Techn., 2009,18: 045002.
  • 7Petrovic Z L, Stojanovic V’ Nikitovic Z. Modeling ofthermaliza^on oi fkst electrons in nitrogen at lowpressures fj]. Plasma Sources Sci. Techn., 2009, 18:034017.
  • 8Lebedev Y A, Tatarinov A V, Epstein I L. Modeling of theelectrode microv^ave discharge in nitrogen [J]. PlasmaSources Sci. Techn., 2007, 16: 726.
  • 9Zhang L Z, Zhao S X,Meng X L. Characterization ofnitrogen glow discharge plasma via optical emissionspedrvm simiriMioo [J]. Plasma Sci. Techn., 2008, 10 (4):455.
  • 10Bastien F, Wu J H, Goguillon P, et al. Mechanism of anitrogen abnofinal glow discharge: computation andmeasuremmts of the spatial light distribution [J]. J. Phys.D: Appl. Phys., 1990, 23:813.

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