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980nm半导体激光二极管的温度特性 被引量:3

Temperature Characteristics of 980 nm Semiconductor Laser Diode
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摘要 测试并分析了980nm半导体激光二极管(SLD)模块的输出光功率、光谱和消光比与注入电流及温度的变化关系。结果反映:在测试范围内,温度不变时该模块的输出光功率随注入电流的增大而增加,经历了自发辐射和受激放大过程;电流不变时该输出光功率随管芯温度的变化基本保持稳定。温度不变的情况下,当注入电流小于阈值电流时,峰值波长、3dB带宽和消光比随注入电流的增大而较快增加,当注入电流大于阈值电流时,峰值波长、3dB带宽和消光比随注入电流的增大而缓慢增加;电流不变时峰值波长、3dB带宽和消光比随温度升高而有所增大。 The output optical power, spectra and extinction ratio of a 980 nm semiconductor laser diode (SLD) module were measured and analyzed when the SLD was operated with different current at different temperature. The resuits show that the SLD is a threshold device, its output optical power increases with the operation current and does weakly change with temperature. The peak wavelength, 3dB bandwidth and extinction ratio increase sharply with the operation current when it's lower than threshold current, while they increase slowly with the operation current when it higher than threshold current at same temperature. The peak wavelength, 3dB bandwidth and extinction ratio increase with rising the temperature at same operation current.
作者 韦文生
出处 《激光与红外》 CAS CSCD 北大核心 2006年第7期558-560,共3页 Laser & Infrared
基金 高校博士点基金(200220006037) 北京航空航天大学博士生基础性研究基金的资助
关键词 半导体激光二极管 光谱 输出功率 消光比 semiconductor laser diode optical spectrum output optical power extinction ratio
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