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多晶Co膜退火前后磁滞标度行为研究

Behavior of Hysteresis Scaling on Thin Polycrystalline Co Film before and after Annealing
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摘要 研究了多晶Co薄膜制备态与退火态的磁滞回线与标度行为,结果表明:对易轴方向A∝A0+H(0.67-1.00)Ω0.90,对难轴方向A∝A0+H(1.75-2.50)Ω(1.45-0.95),与理论计算(α=0.95,β=0.28(Heisenberg模型))作比较,A与H的关系符合的较好,A与Ω的指数关系有些差异,这种差异还有待进一步研究。 The behavior of hysteresis scaling on thin polycrystalline Co film before and after annealing is studied. The results are A∝A0+H^(0.67-1.00)Ω^0.90 for easy direction and A∝A0+H^(1.75-2.50)Ω^(1.45-0.95) for difficult direction. The consistence between them is found and compared with those from theory calculation ( ( α = 0.95, β = 0.28 ( Heisenberg Model) ) : A and H is well, A and have variety. This variety will be researched in future.
出处 《济南大学学报(自然科学版)》 CAS 2006年第4期363-366,共4页 Journal of University of Jinan(Science and Technology)
基金 福建省教育厅A类基金(JA03180)
关键词 多晶Co薄膜 磁滞回线 标度行为 thin polycry stalline Co film magnetic hysteresis loops scaling behavior
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