摘要
利用射频磁控溅射技术,在单晶硅衬底上生长出高质量(0002)晶面取向的ZnO外延薄膜。通过XRD、AFM、吸收光谱、光致荧光发光谱的实验研究,发现加入适当厚度的、低温生长的ZnO同质缓冲层,可有效降低晶格失配和因热膨胀系数不同引起的晶格畸变。在衬底温度200℃、沉积时间5min的ZnO缓冲层上,以450℃衬底温度溅射ZnO薄膜主层,得到的ZnO样品的晶体结构、表面形貌和光学性质均有较明显的改善。
（0002） orientated ZnO films were deposited on silicon substrates by radio frequency （RF） magnetron sputtering technique. The samples were investigated by X-ray diffraction, atomic force microscope, optical absorption and photoluminescence （PL） spectra. It is discovered that the homo-buffer layer at low temperature can reduce the lattice distortion caused by lattice misfit and difference of the thermal expansion coefficients. The structure, surface morphology and optical properties of the ZnO films which are deposited at 450℃ on homo-buffer layer fabricated at 200℃ are improved significantly.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第7期48-51,共4页
Electronic Components And Materials
基金
广东省自然科学基金资助项目(04011770)
广东省江门市科技计划基金资助项目(江财企2004.59号)
关键词
半导体技术
射频磁控溅射
ZNO薄膜
同质缓冲层
PL谱
semiconductor technology
RF magnetron sputtering
ZnO thin films
homo-buffer layer
PL spectrum
