摘要
使用0.25μm G aA s PHEM T工艺技术,设计和制造了性能优良的5-22 GH z两级并联反馈单片低噪声放大器。在工作频率5-22 GH z内,测得增益G≥18 dB,带内增益波动ΔG≤±0.35 dB,噪声系数N F≤3.2 dB,输入输出驻波V SW R≤1.7,最小分贝压缩点输出功率P1dB≥10.5 dBm,电流增益效率达2.77 mA/dB。测试结果验证了设计的正确性。
A 5-22 GHz two-stage MMIC LNA with good performances was designed and fabricated using 0. 25 μm GaAs PHEMT processes. Having been measured from frequency 5.0 GHz to 22 GHz, the LNA achieved a power gain of 18 dB with a good flatness of ±0.35 dB only, a maximum noise figure of 3.2 dB, input and output VSWRs of better than 1.7 and minimum output P1dBpower of 10. 5 dBm,current to gain efficiency of 3.3 mA/dB. The design agrees well with the measured results of this MMIC LNA.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2006年第2期175-178,共4页
Research & Progress of SSE
