摘要
目的:研究低强度激光对红细胞流变学特性的影响。方法:分别用3mW、4mW、5mW、6mW、10mW的半导体激光照射患者离体血液,直接测量切变率为100 S-1、300 S-1、600 S-1、1000 S-1时红细胞的变形指数Dii、最大变形指数MAXDI和变形指数曲线面积SSS。结果:用650nm激光照射20min后,红细胞变形能力有明显改善,此变形能力的改善随照射功率增大而增强,至4mW后趋于饱和。结论:低强度激光照射能显著提高红细胞的变形能力,功率为4mW效果最佳。
Objective： The effects of low power Semiconductor laser irradiation on erythrocyte rheotogy were investigated. Methods~ To irradiation the blood of the patient by using semiconductor laser in 3mW, 4mW, 5mW, 6mW and 10mW respectively, then measure the DIi, MAXDI and SSS of erythrocyte when the rate of shear is 100 S-, 300 S-, 600 S-, 1000 S-. Results： When 650nm laser was used for irradiation, the deformability of erythrocytes was improved obviously. The changing tendency is that, the erythrocyte＇s deformation was enhanced with the increasing of irradiation power and then saturated 4mW. Conelusion： Low power semiconductor laser irradiation can greatly increase the deformability of crythrocyte, and the effects reaches the best by using in 4mW.
出处
《应用激光》
CSCD
北大核心
2006年第2期134-136,共3页
Applied Laser
关键词
半导体激光
红细胞
变形能力
semiconductor laser, erythrocyte, deformability
