摘要
文章叙述了大规模集成电路（ＬＳＩ）等离子和反应离子刻蚀原理及在线监测刻蚀过程的基本方法。详述了用等离子发射光谱法进行ＬＳＩ离子刻蚀过程监测的具体实施和实验结果，得到了８０Ａ的动态监测精度和０．３ｃｍ２的最小可监测面积。最后文章还讨论了影响监测精度的因素。
This paper describes the etching principe of the plasma etch and the reactive-ion etch for Large scale integration of circuits and basic methods for monitoring etch process on line.Implementation of monitoring etch process for large scale integration of circuits by the plasma emission spectroscopy and results of monitoring are described in the paper in detail.The minimum area monitored of 0.3 cm2 and the dynamic monitoring accuracy of less than 80 A have been obtained. Finally the paper will discuss factors influellde on monitoring precision.
出处
《光学精密工程》
EI
CAS
CSCD
1996年第3期75-80,共6页
Optics and Precision Engineering
关键词
等离子体
在线监测
刻蚀
大规模
集成电路
Plasma,Emission spectroscopy,In situ monitoring,Etch,Endpoint
