相变存储器曝光工艺研究
Study on C-RAM Electron Beam Lithography Technology
摘要
介绍了在相变材料上的曝光工艺研究,得出了相应的工艺条件,研究了邻近效应的影响以及利用邻近效应制作nm量级间隔大电极对的方法。
EB lithography on C-RAM and proximity effect were introduced. A method has worked out to obtain large-area double-electrode with nano-interval.
出处
《微纳电子技术》
CAS
2006年第6期298-300,共3页
Micronanoelectronic Technology
关键词
曝光
相变材料
邻近效应
电极
expoal
phase change material
proximity effect
electrode
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