摘要
采用常规陶瓷加工成型及烧结工艺,研究了在Ba0.6Sr0.4TiO3(BST)陶瓷中掺杂1.0%,20.0%,40.0%,60.0%(质量分数)的MgO后介电性能的变化规律。又通过对微波介质性能的测量,绘制出Ba0.6Sr0.4TiO3(BST)陶瓷随温度变化的相变图及其介电常数和可调谐率随MgO掺杂量变化的曲线。
The dielectric properties of Ba0.6Sr0.4TiO3 （BST） ceramics doped with 1.0%, 20.0%, 40.0%, and 60.0% （mass fraction）MgO were investigated by conventional ceramic process. The effects of MgO doping on BST phase transitions were examined. Relation between dielectric constant, tunable ratio and DC electric field of BST ceramic with different contents of MgO has been introduced by curves.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2006年第6期52-54,共3页
Electronic Components And Materials
关键词
无机非金属材料
掺杂
MGO
BST
相变
inorganic non-metallic materials
doping
BST
phase transition
