摘要
为了进一步研究ZnSnO3气敏半导体表面的能带结构情况和电子得失情况,提出了Ferm i能级钉扎理论在气敏材料开发研究中的应用.从实验出发,利用具有高表面态的FeC l2/FeC l3氧化还原对测定了ZnSnO3气敏材料的表面态与表面处导带底的相对位置.结果发现:Ferm i能级被钉扎在ZnSnO3表面处导带边Ecs下面约0.2 eV处.其值基本上不受杂质掺入比例的影响,与掺杂剂的掺入浓度基本上无关,与工作气氛也基本上无关.从而从实验上验证了Ferm i能级钉扎理论.
In order to research the state of energy bands and gain and loss of electrons on the surface of ZnSnO3 , it is put forward that Pinning theory of Fermi energy is applied to development of gas sensitive materials. The relative position between surface state and conduction band on surface of zinc tin complex oxide （ZnSnO3） gas sensitive material has been investigated by utilizing oxidation redox couple, FeCl2/ FeCl3, which have high surface state. Fermi energy is pinned at about 0.2 eV below conduction band Ecs on the surface of ZnSnO3. It has been determined that additives doping ratio, addition concentration and working atmosphere have no effect on this value. Therefore, pinning theory of Fermi energy has been verified by using this method.
出处
《重庆大学学报（自然科学版）》
EI
CAS
CSCD
北大核心
2006年第5期55-58,共4页
Journal of Chongqing University
基金
重庆市自然科学资金资助项目(8430)
